SEM electron microscope SU9600

STEMFE-SEMscanning electron

Overview
The SU9600 is a modular, transmission-optimized scanning electron microscope designed for advanced analysis of nanomaterials, 2D materials and semiconductors. It integrates ultra-high-resolution SEM (UHR-SEM) and analytical STEM capabilities on a single, high-stability platform, with optional 4D-STEM, EELS and nano-EDS modules for multi-modal studies.

Tagline
The unique transmission-optimized SEM for advanced nanomaterials analysis

Key points

• Combines analytical STEM and UHR-SEM functions on one stable platform
• Ultra-high-resolution imaging from 10 V to 30 kV for surface and structural studies
• Cold field emission gun (CFE), full-immersion objective lens and TEM-like stage enabling world-class resolution (0.34 nm guaranteed, ~0.2 nm achievable)

Capabilities and benefits

• Reflected and transmitted electron detection with energy and angular filtering
• Correlate surface signals (SE/BSE) with transmitted-electron signals (BF/ADF/EELS/4D-STEM)
• Sub-nm elemental analysis via high solid-angle windowless EDS
• EELS and 4D-STEM enable investigation of electronic structure, bonding and strain; CFE improves EELS energy resolution
• Optional fast direct-electron 4D-STEM camera with projector lens for DPC, ptychography, strain and phase mapping
• Flexible sample environment: cryo holders, MEMS holders, deceleration holder and TEM double-tilt holders (options)

Applications

• Nanomaterials: nanoscale elemental mapping, lattice and grain imaging, nanowire composition
• Thin films: surface morphology, grain structure and cross-section orientation analysis
• Elemental analysis: high-resolution EDS mapping and low-kV EELS for oxidation state and electronic-structure studies
• Semiconductors: high-resolution imaging and transmitted-electron analysis for device and failure analysis

Notes

• Features marked with * are optional (4D-STEM, EELS, nano-EDS, holders).
• Advanced modes (e.g., deceleration holder / top detector) are optional and can affect landing-voltage performance.

Specifications / technical data

• SE image resolution: 0.4 nm @ 30 kV; 1.0 nm @ 1 kV; 0.6 nm @ Landing Voltage of 1 kV (*1)
• STEM image resolution: 0.34 nm @ 30 kV (lattice image) (*2)
• Accelerating voltage: 0.5 to 30 kV
• Landing voltage (*1): 0.01 to 20 kV
• Electrical image shift: Up to ±5 µm (Specimen height = 0.0 mm)
• Stage traverse: X: ±4.0 mm; Y: ±2.0 mm; Z: ±0.3 mm; T (tilt): ±40°
• Specimen size - Flat specimen stage (Max.): 5.0 mm × 9.5 mm × 3.5 mm (H)
• Specimen size - Cross section specimen stage (Max.): 2.0 mm × 6.5 mm × 5.0 mm (H)
• Electron source: Cold field emission (high-brightness, low chromatic aberration) with NEG option for improved EELS performance
• Detectors & analysis: reflected and transmitted electron detection, energy/angular filtering, high solid-angle windowless EDS, EELS, 4D-STEM (optional), direct-electron 4D-STEM camera (optional)
• Footnotes: *1 With optional deceleration holder and top detector. *2 Option.